bc817-25 / bc817-40 bc817-25 bc817-40 npn general purpose amplifier this device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 a. sourced from process 38. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted symbol characteristic max units *bc817-25 / bc817-40 p d total device dissipation derate above 25 c 350 2.8 mw mw / c r q ja thermal resistance, junction to ambient 357 c/w symbol parameter value units v ceo collector-emitter voltage 45 v v ces collector-base voltage 50 v v ebo emitter-base voltage 5.0 v i c collector current - continuous 1.5 a t j , t stg operating and storage junction temperature range -55 to +150 c sot-23 c e b mark: 6b. / 6c. * device mounted on fr-4 pcb 40 mm x 40 mm x 1.5 mm. discrete power & signal technologies ? 1997 fairchild semiconductor corporation
bc817-25 / bc817-40 electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test c onditions min max units v ( br ) ceo collector-emitter breakdown voltage i c = 10 ma, i b = 045v v ( br ) ces collector-base breakdown voltage i c = 100 m a, i e = 0 50 v v ( br ) ebo emitter-base breakdown voltage i e = 10 m a, i c = 0 5.0 v i cbo collector-cutoff current v cb = 20 v v cb = 20 v, t a = 150 c 100 5.0 na m a on characteristics h fe dc current gain i c = 100 ma, v ce = 1.0 v - 25 - 40 i c = 500 ma, v ce = 1.0 v 160 250 40 400 600 v ce( sat ) collector-emitter saturation voltage i c = 500 ma, i b = 50 ma 0.7 v v be( on ) base-emitter on voltage i c = 500 ma, v ce = 1.0 v 1.2 v npn general purpose amplifier (continued) typical characteristics collector-emitter saturation voltage vs collector current 0.01 0.1 1 3 0 0.1 0.2 0.3 0.4 0.5 0.6 i - collector current (a) v - collector-emitter voltage (v) cesat c b = 10 125 o c - 40 oc 25c typical pulsed current gain vs collector current 0.001 0.01 0.1 1 2 0 100 200 300 400 500 i - collector current (a) h - typical pulsed current gain fe - 40 oc 25 c c v = 5v ce 125 c
bc817-25 / bc817-40 npn general purpose amplifier (continued) typical characteristics (continued) base-emitter on voltage vs collector current p38 0.001 0.01 0.1 1 0.2 0.4 0.6 0.8 1 i - collector current (a) v - base-emitter on voltage (v) be(on) c v = 5v ce 125 o c - 40 oc 25c base-emitter on voltage vs collector current p 0.001 0.01 0.1 1 0.2 0.4 0.6 0.8 1 i - collector current (a) v - base-emitter on voltage (v) be(on) c v = 5v ce 125 o c - 40 oc 25c collector-cutoff current vs ambient temperature 25 50 75 100 125 150 0.1 1 10 100 t - ambient temperature ( c) i - collector current (na) a v = 40v cb o cbo collector-base capacitance vs collector-base voltage pr 38 0 4 8 12 16 20 24 28 0 10 20 30 40 v - collector-base voltage (v) c - collector-base capacitance (pf) cb obo gain bandwidth product vs collector current 1 10 100 1000 0 100 200 300 400 500 i - collector current (ma) h - gain bandwidth product (mhz) c fe v = 10v ce power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 temperature ( c) p - power dissipation (mw) d o sot-23
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